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cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 1/12 MTB012C04Q8 cystek product specification n- and p-channel enhancement mode mosfet MTB012C04Q8 description the MTB012C04Q8 consists of a n-channel and a p-channel enhancement-mode mosfet in a single sop-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTB012C04Q8-0-t3-g sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel MTB012C04Q8 sop-8 g gate s source d drain n-ch p-ch bv dss 40v -40v i d @ v gs =10v(-10v) 8.4a -8.1a r dson (typ.) @v gs =(-)10v 11.8m 15.4m r dson (typ.) @v gs =(-)4.5v 15.7m 18.7m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products d2 d2 d1 d1 s2 g2 g1 packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name pin 1 s1
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 2/12 MTB012C04Q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 40 -40 gate-source voltage v gs 20 20 v t a =25 c, v gs =10v (-10v) 8.4 -8.1 continuous drain current (note 2) t a =70 c, v gs =10v (-10v) 6.7 -6.5 t c =25 c, v gs =10v (-10v) 13.2 -12.8 continuous drain current t c =100 c, v gs =10v (-10v) i d 8.3 -8.1 pulsed drain current (note 1) i dm 74 -72 a power dissipation @t c =25 c 5 2 (note 2) power dissipation @ t a =25 c p d 1.14 (note 3) w operating junction and storage te mperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 25 62 (note 2) thermal resistance, junction-to-ambient, max r th,j-a 110 (note 3) c/w note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s. 3. surface mounted on 1 in2 copper pad of fr-4 board, steady state. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 40 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =32v, v gs =0v i dss - - 25 a v ds =32v, v gs =0v, tj=125 c - 11.8 15 v gs =10v, i d =8a *r ds(on) - 15.7 22 m v gs =4.5v, i d =6a *g fs - 12 - s v ds =10v, i d =8a dynamic ciss - 672 - coss - 119 - crss - 53 - pf v ds =15v, v gs =0v, f=1mhz *td (on) - 7.8 - *tr - 17.4 - *td (off) - 48 - *tf - 35.4 - ns v ds =15v, i d =1a, v gs =10v, r g =25
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 3/12 MTB012C04Q8 cystek product specification *qg - 6.4 - *qgs - 2.4 - *qgd - 2.2 - nc v ds =15v, i d =8.3a, v gs =4.5v body diode *i s - - 2.3 *i sm - - 9.2 a *v sd - 0.73 1 v v gs= 0v, i s =1a *trr - 10.6 - ns *qrr - 4.5 - nc i f =1a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% p-channel electrical characteristics (tc=25c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -40 - - v gs =0v, i d =-250 a v gs(th) -1.0 - -2.5 v v ds =vgs, i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-32v, v gs =0v i dss - - -25 a v ds =-32v, v gs =0v, tj=125 c - 15.4 20 v gs =-10v, i d =-7a *r ds(on) - 18.7 27 m v gs =-4.5v, i d =-5a *g fs - 14.5 - s v ds =-10v, i d =-7a dynamic ciss - 2334 - coss - 206 - crss - 124 - pf v ds =-15v, v gs =0v, f=1mhz *td (on) - 12 - *tr - 20.2 - *td (off) - 173.2 - *tf - 62 - ns v ds =-15v, i d =-1a, v gs =-10v, r g =15 *qg - 20.5 - *qgs - 6.4 - *qgd - 6.3 - nc v ds =-15v, i d =-7.6a, v gs =-4.5v body diode *i s - - -2.1 *i sm - - -8.4 a *v sd - -0.72 -1 v v gs =0v, i s =-1a *trr - 14.2 - ns *qrr - 6.6 - nc i f =-1a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 4/12 MTB012C04Q8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 10 20 30 40 50 012345 v ds , drain-source voltage(v) i d , drain current(a) v gs =3v 3.5v 10v,6v,5.5v,5v,4.5v 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 5 10 15 20 25 30 35 40 45 50 024681 0 0 tj=25c tj=150c drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =8a r ds( on) @tj=25c : 11.8m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =8a i d =6a
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 5/12 MTB012C04Q8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =8.3a v ds =15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 1ms 100 s r ds( on) limited t a =25c, tj=150c, v gs =10v r ja =62c/w,single pulse 1s 100ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 t j , junction temperature(c) i d , maximum drain current(a) t a =25c, tj=150c,v gs =10v r ja =62c/w
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 6/12 MTB012C04Q8 cystek product specification typical characteristics(cont.) : q1( n-channel) typical transfer characteristics 0 10 20 30 40 50 012345 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =62c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62 c/w
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 7/12 MTB012C04Q8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 10 20 30 40 50 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -10v, -6v, -5.5v,-5v,-4.5v,-4v -v ds , drain-source voltage(v) -i d , drain current (a) -3.5v -3v i d =-250 a, v v gs =-2.5v =0v gs static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-4.5v -10v source drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0246810 -i s , source drain current(a) -v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 5 10 15 20 25 30 35 40 45 50 024681 -v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance(m) 0 i d =-7a i d =-5a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain-source on-state resistance v gs =-10v, i d =-7a r ds( on) @tj=25c : 15.4m typ.
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 8/12 MTB012C04Q8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , threshold voltage(v) i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) v ds =-10v pulsed t a =25c gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-7.6a v ds =-15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -i d , drain-source voltage(v) -i d , drain current(a) dc 10ms 100ms 100 s t a =25c, tj=150c, v gs =-10v r ja =62c/w, single pulse 1s 1ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, tj=150c, v gs =-10v r ja =62c/w
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 9/12 MTB012C04Q8 cystek product specification typical characteristics(cont.) : q2(p-channel) typical transfer characteristics 0 10 20 30 40 50 012345 -v gs , gate-source voltage(v) -i d , drain current (a) v ds =-10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =62c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =62 c/w
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 10/12 MTB012C04Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 11/12 MTB012C04Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note :1. all temperatures refer to topside of the package, measured on the package body surface. 2.for devices mounted on fr-4 pcb of 1.6mm or equivalent grade pcb. if ot her grade pcb is used, care should be taken to match the coefficient s of thermal expansion between components and pcb. if they are not matched well, the solder joints may crac k or the bodies of the parts may cr ack or shatter as the assembly cools.
cystech electronics corp. spec. no. : c049q8 issued date : 2017.04.24 revised date : page no. : 12/12 MTB012C04Q8 cystek product specification sop-8 dimension marking: b012 device name c04 date code date code(counting from left to right) : 1 st code: year code, the last digit of christian year 2 nd code : month code, jan a, feb b, mar c, apr d may e, jun f, jul g, a u g h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99 8-lead sop-8 plastic package cystek packa g e code: q8 millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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